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Properties and structure of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (100), (111)A, and (111)Borientations

✍ Scribed by G. B. Galiev; V. G. Mokerov; Yu. V. Slepnev; Yu. V. Khabarov; A. A. Lomov; R. M. Imamov

Book ID: 110121219
Publisher: Springer
Year: 1999
Tongue: English
Weight: 80 KB
Volume: 44
Category: Article
ISSN: 1063-7842
DOI: 10.1134/1.1259351

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