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Ultraviolet luminescence of thin GaN films grown by radical-beam gettering epitaxy on porous GaAs(111) substrates

✍ Scribed by V. V. Kidalov; G. A. Sukach; A. S. Revenko; E. P. Potapenko

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Luminescence of GaN Layers Grown on GaAs

✍ M. B. Kotlyarevskii; G. A. Sukach; V. V. Kidalov; A. S. Revenko 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 49 KB

Properties and structure of GaAs films g

✍ G. B. Galiev; V. G. Mokerov; Yu. V. Slepnev; Yu. V. Khabarov; A. A. Lomov; R. M. 📂 Article 📅 1999 🏛 Springer 🌐 English ⚖ 80 KB

Study of the structural perfection and d

✍ G. B. Galiev; V. G. Mokerov; V. V. Saraikin; Yu. V. Slepnev; G. I. Shagimuratov; 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 232 KB

The growth and electronic properties of

✍ W.T. Yuen; W.K. Liu; R.A. Stradling; B.A. Joyce 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 479 KB

Reduction of the dislocation density for

✍ Y. D. Woo; H. I. Lee; T. W. Kang; T. W. Kim; K. L. Wang 📂 Article 📅 1995 🏛 Springer 🌐 English ⚖ 314 KB