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Luminescence of GaN Layers Grown on GaAs Substrates by the Method of Radical‐Beam Epitaxy

✍ Scribed by M. B. Kotlyarevskii; G. A. Sukach; V. V. Kidalov; A. S. Revenko

Book ID: 110345645
Publisher: Springer US
Year: 2002
Tongue: English
Weight: 49 KB
Volume: 69
Category: Article
ISSN: 0021-9037
DOI: 10.1023/a:1016101605174

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