Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method

✍ Scribed by Y. D. Woo; H. I. Lee; T. W. Kang; T. W. Kim; K. L. Wang

• Publisher: Springer
• Year: 1995
• Tongue: English
• Weight: 314 KB
• Volume: 14
• Category: Article
• ISSN: 0261-8028
• DOI: 10.1007/bf00270721