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Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

✍ Scribed by G. B. Galiev; V. G. Mokerov; V. V. Saraikin; Yu. V. Slepnev; G. I. Shagimuratov; R. M. Imamov; É. M. Pashaev

No coin nor oath required. For personal study only.

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Investigation of distribution and redist

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