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Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations

✍ Scribed by G. B. Galiev; V. É. Kaminskii; V. G. Mokerov; V. K. Nevolin; V. V. Saraikin; Yu. V. Slepnev

Book ID: 110120416
Publisher: Springer
Year: 2000
Tongue: English
Weight: 126 KB
Volume: 34
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1188065

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