Incorporation behaviour of carbon and silicon on (100) and (111) surfaces during growth of GaAs/GaAs and Ga0.47In0.53As/InP by molecular beam epitaxy

✍ Scribed by J.M. Schneider; J. Ziegler; H. Heinecke

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 445 KB
• Volume: 28
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(96)00137-1

✦ Synopsis

Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hall measurements for Si-doped GaAs and Ga0.471n0.s3As layers are independent of growth temperature on all surt2tce orientations studied. Silicon acts fundamentally as a donor except, as expected, for doped