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Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the([2ar 1ar 1])direction

✍ Scribed by G. B. Galiev; V. G. Mokerov; V. A. Kul’bachinskii; V. G. Kytin; R. A. Lunin; A. V. Derkach; I. S. Vasil’evskii

No coin nor oath required. For personal study only.

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Conductance anisotropy of δ-Si doped GaAs layers grown by molecular beam epitaxy on (111)A GaAs substrates and misoriented in the([2ar 1ar 1])direction