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A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(ar 1ar 1)] direction

✍ Scribed by G. B. Galiev; V. G. Mokerov; É. R. Lyapin; V. V. Saraikin; Yu. V. Khabarov

No coin nor oath required. For personal study only.

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Conductance anisotropy of δ-Si doped GaA

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A study of the electrical and optical properties of Si delta-doped GaAs layers grown by MBE on a (111)A GaAs surface misoriented toward the [2(ar 1ar 1)] direction