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Fabrication of quantum wires and dots on GaAs (111)A patterned substrates by molecular beam epitaxy

✍ Scribed by T. Takebe; T. Watanabe; K. Fujita

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
195 KB
Volume
24
Category
Article
ISSN
0749-6036

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✦ Synopsis

Flat GaAs/AlGaAs multilayers without any extra facets were successfully grown on ridgetype triangles with (021)-related sidewalls having an inverted mesa on GaAs (111)A substrates by molecular beam epitaxy. The result was obtained on the basis of the large difference in the growth rate between the [111]A and [0 11] directions. Fabrication of quantum dots on ridge-type triangles and hexagons with smaller sizes and quantum wires on stripes running in the [ 11 2]A direction was proposed.

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