Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy

✍ Scribed by T. Kitada; A. Wakejima; N. Tomita; S. Shimomura; A. Adachi; N. Sano; S. Hiyamizu

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 418 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80259-f