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The role of dose and position on the concentration of residual point defects in as-implanted wafers

✍ Scribed by S. Prussin; O.W. Holland

Book ID
114169770
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
354 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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system. We observed a typical dissociation efficiency of 0.63 from the hydrogen discharge and of 0.73 from a mixture of hydrogen and argon. After coating with concentrated ortho-phosphoric acid. a hydrogen dissociation efficiency as high as 0.82 could be observed. The fraction of dissociated oxygen