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Effects of substrate temperature on the annealing behavior of residual defects in high-dose As+ implanted (001) Si

✍ Scribed by S.N. Hsu; L.J. Chen; S.S. Lau

Book ID: 113281992
Publisher: Elsevier Science
Year: 1991
Tongue: English
Weight: 419 KB
Volume: 59-60
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(91)95759-7

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