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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

✍ Scribed by Pastor, D.; Cuscó, R.; Artús, L.; González-Díaz, G.; Iborra, E.; Jiménez, J.; Peiró, F.; Calleja, E.

Book ID: 121761085
Publisher: American Institute of Physics
Year: 2006
Tongue: English
Weight: 413 KB
Volume: 100
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2259817

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