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Excitonic absorption of GaN epilayers on sapphire: Dynamics, intensity, and temperature dependence

✍ Scribed by Haag, H.; Gilliot, P.; Lévy, R.; Hönerlage, B.; Briot, O.; Ruffenach-Clur, S.; Aulombard, R. L.

Book ID
121328424
Publisher
The American Physical Society
Year
1999
Tongue
English
Weight
138 KB
Volume
59
Category
Article
ISSN
1098-0121

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The polarization dependence of biexcitonic signals and quantum beats between A-excitons (X A ) and A-biexcitons (X A X A ) in a high-quality GaN epilayer is measured by spectrally-resolved and time-integrated four-wave mixing. With cross-linear polarised light, mixed beats with two periods are obser