✦ LIBER ✦

Formation of Ti/Al ohmic contacts on Si-doped GaN epilayers by low temperature annealing

✍ Scribed by Tan, L S; Prakash, S; Ng, K M; Ramam, A; Chua, S J; Wee, A T S; Lim, S L

Book ID: 115484100
Publisher: Institute of Physics
Year: 2000
Tongue: English
Weight: 114 KB
Volume: 15
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/15/6/317

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Ohmic contact formation of Ti/Al/Ni/Au t

Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method

✍ Z.Z Chen; Z.X Qin; C.Y Hu; X.D Hu; T.J Yu; Y.Z Tong; X.M Ding; G.Y Zhang 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 157 KB

Auger depth profile analysis and EFTEM a

Auger depth profile analysis and EFTEM analysis of annealed Ti/Al-contacts on Si-doped GaN

✍ Markus Pidun; Peter Karduck; Joachim Mayer; Klaus Heime; Bernd Schineller; Thoma 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 499 KB

Influence of Surface Treatment and Annea

Influence of Surface Treatment and Annealing Temperature on the Formation of Low-Resistance Au/Ni Ohmic Contacts top-GaN

✍ I. Chary; A. Chandolu; B. Borisov; V. Kuryatkov; S. Nikishin; M. Holtz 📂 Article 📅 2009 🏛 Springer US 🌐 English ⚖ 423 KB

Low Resistance Al/Si Ohmic Contacts on B

Low Resistance Al/Si Ohmic Contacts on Boron Implanted Shallow p + Si Layers Formed by Halogen Lamp Annealing

✍ Hara, Tohru; Ohtsuka, Noboru; Enomoto, Syuichi; Hirayama, Takeshi; Amemiya, Kimi 📂 Article 📅 1983 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 481 KB