## Abstract DCβ and RFβpulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300β525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates
β Scribed by Meng Wei; Xiaoliang Wang; Xu Pan; Hongling Xiao; Cuimei Wang; Cuibai Yang; Zhanguo Wang
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 270 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metalβorganic chemical vapour deposition (MOCVD). __In situ__ curvature measurements, Xβray diffraction (XRD) and transmission electr
## Abstract We report on the fabrication and characterization of AlGaN/GaN metalβinsulatorβsemiconductor heterostructure field effect transistors (MISHFETs) using HfO~2~ and Al~2~O~3~ as gate dielectric, deposited by atomic layer deposition (ALD). Improved device performance has been observed for a