✦ LIBER ✦

On the nature of dislocation loops in As-implanted and post- annealed Si wafers

Publisher: Elsevier Science
Year: 1978
Tongue: English
Weight: 162 KB
Volume: 28
Category: Article
ISSN: 0042-207X
DOI: 10.1016/s0042-207x(78)80300-5

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✦ Synopsis

system. We observed a typical dissociation efficiency of 0.63 from the hydrogen discharge and of 0.73 from a mixture of hydrogen and argon. After coating with concentrated ortho-phosphoric acid. a hydrogen dissociation efficiency as high as 0.82 could be observed. The fraction of dissociated oxygen molecules was measured to be 0.33. (Germany)

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