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X and K band ESR study of the Pb interface centres in thermally oxidized p-type (001)Si wafers at low temperatures and influence of medium-dose As+ ion implantation

✍ Scribed by A. Stesmans; J. Braet; J. Witters; R.F. Dekeersmaecker


Publisher
Elsevier Science
Year
1984
Weight
136 KB
Volume
141
Category
Article
ISSN
0167-2584

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