The reactive sputtering of thin films of TiN at low target voltages
โ Scribed by RA Swady; HA Ja'fer; RP Howson
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 268 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We report on the physical properties of tin-nitride thin films deposited onto glass substrates by rf reactive sputtering. The crystal structure of the tin-nitride films is hexagonal and the lattice parameters are calculated from X-ray diffraction patterns as a = 0.369 nm and c = 0.529 nm. X-ray phot
The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep