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Low-Temperature Synthesis of Gallium Nitride Thin Films Using Reactive Rf-Magnetron Sputtering

✍ Scribed by Bondar, V. ;Kucharsky, I. ;Simkiv, B. ;Akselrud, L. ;Davydov, V. ;Dubov, Yu. ;Popovich, S.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 131 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<329::aid-pssa329>3.0.co;2-e

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✦ Synopsis

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film deposition rate on rf-discharge power, substrate temperature and working gas pressure was estimated. The influence of technological conditions of deposition on crystal structure parameters of gallium nitride thin films were investigated.

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