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The point defect engineering approaches for ultra-shallow boron junction formation in silicon

โœ Scribed by W.-K. Chu; J.R. Liu; X. Lu; L. Shao; X. Wang; P. Ling

Book ID
114165542
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
286 KB
Volume
190
Category
Article
ISSN
0168-583X

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This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured