Ultra-shallow junction formation in silicon using phosphorus and boron doping by electron irradiation

✍ Scribed by X.Q. Li; C. Wang; X.B. Ma; J. Yang

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 361 KB
• Volume: 44
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(93)90284-h