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Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

✍ Scribed by A. Florakis; N. Misra; C. Grigoropoulos; K. Giannakopoulos; A. Halimaoui; D. Tsoukalas

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
446 KB
Volume
154-155
Category
Article
ISSN
0921-5107

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πŸ“œ SIMILAR VOLUMES

Laser annealing of plasma implanted boro
Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon
✍ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured