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Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations

โœ Scribed by A. Merabet


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
247 KB
Volume
124-125
Category
Article
ISSN
0921-5107

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๐Ÿ“œ SIMILAR VOLUMES


Laser annealing of plasma implanted boro
โœ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured