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Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

โœ Scribed by K.K. Ong; K.L. Pey; P.S. Lee; A.T.S. Wee; Y.F. Chong; K.L. Yeo; X.C. Wang

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
186 KB
Volume
114-115
Category
Article
ISSN
0921-5107

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This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured