Ultra shallow and abrupt n+–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices

✍ Scribed by Jihun Oh; Kiju Im; Chang-Geun Ahn; Jong-Heon Yang; Won-ju Cho; Seongjae Lee; Kyoungwan Park

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 128 KB
• Volume: 110
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.03.016