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Boron diffusion in silicon: the anomalies and control by point defect engineering

✍ Scribed by Lin Shao; Jiarui Liu; Quark Y. Chen; Wei-Kan Chu

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Role of point defects in the transient d

✍ N.E.B. Cowern; H.F.F. Jos; K.T.F. Janssen 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 417 KB

Lifetime and diffusion length inhomogene

✍ A. Castaldini; A. Cavallini; E. Gombia; R. Mosca; L. Tarricone; A. Motta; L. Bor 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 264 KB

Control of point defects and grain bound

✍ Tsubasa Nakagawa; Isao Sakaguchi; Katsuyuki Matsunaga; Takahisa Yamamoto; Hajime 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 166 KB

Study of point defect clusters in high p

✍ R.R Ramanan; G Bhagavannarayana; Krishan Lal 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 436 KB

Stresses in Silicon after Boron Diffusio

✍ Prof. Dr. O. Brümmer; Dipl.-Phys. H. R. Höche 📂 Article 📅 1969 🏛 John Wiley and Sons 🌐 English ⚖ 365 KB 👁 1 views

The influence of ion current density and

📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 162 KB