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Study of point defect clusters in high purity single crystals of silicon grown by Czochralski and float-zone methods by diffuse X-ray scattering technique

✍ Scribed by R.R Ramanan; G Bhagavannarayana; Krishan Lal


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
436 KB
Volume
156
Category
Article
ISSN
0022-0248

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