<p>Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and me
The Physics of Submicron Lithography
β Scribed by Kamil A. Valiev (auth.)
- Publisher
- Springer US
- Year
- 1992
- Tongue
- English
- Leaves
- 501
- Series
- Microdevices
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the propΒ erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.
β¦ Table of Contents
Front Matter....Pages i-xi
Introduction....Pages 1-5
Forming Electron Beams of Submicron Cross Section....Pages 7-71
The Physics of the Interactions between Fast Electrons and Matter....Pages 73-180
The Physics of Ion-Beam Lithography....Pages 181-300
The Physics of X-Ray Microlithography....Pages 301-394
Optical Lithography....Pages 395-463
Procedures for Processing Exposed Resist Films and Resist Mask Topography....Pages 465-490
Back Matter....Pages 491-493
β¦ Subjects
Solid State Physics;Spectroscopy and Microscopy;Condensed Matter Physics;Crystallography;Electrical Engineering;Optical and Electronic Materials
π SIMILAR VOLUMES
<p>The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfa
<p>The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull
<p>An Institute like ours cannot help but lend credence to the notion of the late Derek J. de Solla Price of Yale University that "the scientific revolution was largely the improvement, invention and use of a series of instruments . . . . that expanded the reach of science in innumerable directions"
<p>Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quan