The Physics of Submicron Structures

✍ Scribed by N. Holonyak Jr. (auth.), H. L. Grubin, K. Hess, G. J. Iafrate, D. K. Ferry (eds.)

• Publisher: Springer US
• Year: 1984
• Tongue: English
• Leaves: 348
• Edition: 1
• Category: Library

✦ Synopsis

Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi­ tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro­ ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup­ port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.

✦ Table of Contents

Front Matter....Pages i-x
Quantum-Well and Superlattice Lasers: Fundamental Effects....Pages 1-18
n-i-p-i Doping Superlattices-Semiconductors with Tunable Electronic Properties....Pages 19-32
Tunneling Phenomena in Multibarrier Structures....Pages 33-39
Enhancement of the Ionization Rates Ratio by Spatial Separation of Electrons and Holes in Multilayer Heterojunction Structures: Towards a Solid State Photomultiplier....Pages 41-51
Two-Dimensional Electron Gas Fet (TEGFET)....Pages 53-61
Physics and Modeling Considerations for VLSI Devices....Pages 63-75
Design Considerations for Submicron-Scale GaAs MESFETs....Pages 77-92
Millimeter Impatt Diodes....Pages 93-99
A Dynamic Monte Carlo Simulation of Conduction in Submicron Gaas Devices at 77 K....Pages 101-106
Monte Carlo Simulation of Electron Dynamics in Mos Inversion Channels....Pages 107-113
Performance of Submicron Silicon MOSFETs Fabricated by Edge-Defined Vertical-Etch Technique....Pages 115-125
Modeling of Surface Scattering in the Monte Carlo Simulation of Short Channel MOSFET....Pages 127-138
Generation of Interface States and Charge Trapping in MOSFETs....Pages 139-146
High Field Surface Drift Velocities in Silicon....Pages 147-158
Phonons in Confined Geometries....Pages 159-169
Monte Carlo Simulation of Space-Charge Injection Fet....Pages 171-176
Ensemble Monte Carlo Studies of High Field Spikes and Planar Doped Barrier Devices....Pages 177-183
Self-Consistent Particle-Field Monte Carlo Simulation of Semiconductor Microstructures....Pages 185-194
Electron Distribution Function in GaAs for High and Low Electric Fields....Pages 195-201
Monte Carlo Simulations of Ballistic Structures....Pages 203-210
Noise Considerations in Submicron Devices....Pages 211-217
Ballistic Transport and Velocity Overshoot in Photoconductive Submicron Structures....Pages 219-223
Impact Ionization Coefficients in InP Determined by Analysis of Photocurrent and Noise Measurements....Pages 225-231
Radiative Decay of Surface Plasmons on Nonspherical Silver Particles....Pages 233-238
A Jet-Stream Solution for the Current in Planar-Doped-Barrier Devices....Pages 239-246
The Validity of the Drift-Diffusion Equation in Small Semiconductor Devices....Pages 247-252
High-Field Transport in GaAs, InP, and In x Ga 1-x As y P 1-y ....Pages 253-259
Proposal for a Terahertz Zener Oscillator....Pages 261-266
Considerations on the Finite, Very-Small Semiconductor Device and Superlattice Arrays....Pages 267-275
A Wigner Function Approach to Transport and Switching in Sub-Micron Heterostructures....Pages 277-286
The Electron Diffusion Transistor (A Proposed New Transistor Structure)....Pages 287-294
Point Contact Spectroscopy of Scattering Rates on Semiconductors....Pages 295-300
Lateral Superlattices For MM-Wave and Microelectronic Applications....Pages 301-306
Improved Device Physics for Calculating the Gain of Bipolar Structures in Silicon....Pages 307-311
Generalized Semiconductor Device Modeling Based on Maxwell Theory and Stream Functions....Pages 313-320
Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs....Pages 321-326
Multi-Layered Heterojunction Structure for Millimeter Wave Sources....Pages 327-331
Boundary Scattering Effects in High Field Transport in Submicron Structures....Pages 333-339
Ballistic and Dissipative Effects in Barrier-Limited Current Transport....Pages 341-347
Back Matter....Pages 349-360

✦ Subjects

Solid State Physics;Spectroscopy and Microscopy