The Physics of Submicron Semiconductor Devices

✍ Scribed by Eugène Constant (auth.), Harold L. Grubin, David K. Ferry, C. Jacoboni (eds.)

• Publisher: Springer US
• Year: 1988
• Tongue: English
• Leaves: 729
• Series: NATO ASI Series 180
• Edition: 1
• Category: Library

✦ Synopsis

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

✦ Table of Contents

Front Matter....Pages i-viii
Modelling of Sub-Micron Devices....Pages 1-31
Boltzmann Transport Equation....Pages 33-43
Transport and Material Considerations for Submicron Devices....Pages 45-178
Epitaxial Growth for Sub Micron Structures....Pages 179-194
Insulator/Semiconductor Interfaces....Pages 195-221
Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces....Pages 223-251
Deep Levels at Compound-Semiconductor Interfaces....Pages 253-287
Ensemble Monte Carlo Techniques....Pages 289-322
Noise and Diffusion in Submicron Structures....Pages 323-360
Superlattices....Pages 361-372
Submicron Lithography....Pages 373-400
Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension....Pages 401-443
Physics of Heterostructures and Heterostructure Devices....Pages 445-475
Correlation Effects in Short Time, Nonstationary Transport....Pages 477-501
Device-Device Interactions....Pages 503-519
Quantum Transport and the Wigner Function....Pages 521-576
Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices....Pages 577-589
The Influence of Contacts on the Behavior of Near and Sub-Micron InP Devices....Pages 591-606
Monte Carlo Simulation of Transport in Submicron Structures....Pages 607-627
Two Dimensional Electron Gas Fet....Pages 629-643
Hot Electron Transfer Amplifiers....Pages 645-657
New Graded Band GAP and Superlattice Structures and their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices....Pages 659-682
Metal-Semiconductor Interfaces....Pages 683-701
Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser- Excited Electron-Hole Plasmas....Pages 703-711
Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques....Pages 713-728
Back Matter....Pages 729-736

✦ Subjects

Electronic Circuits and Devices