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The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

✍ Scribed by ZhiWei Bi; Yue Hao; Qian Feng; TingTing Jiang; YanRong Cao; JinCheng Zhang; Wei Mao; Ling Lü; Yue Zhang

No coin nor oath required. For personal study only.

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