Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process

✍ Scribed by Oliver Breitschädel; Bertram Kuhn; Ferdinand Scholz; Heinz Schweizer

• Book ID: 107457938
• Publisher: Springer US
• Year: 1999
• Tongue: English
• Weight: 184 KB
• Volume: 28
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/s11664-999-0133-8