𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth

✍ Scribed by Yugang Zhou; Rongming Chu; Jie Liu; Kevin J. Chen; Kei May Lau

Book ID
104557611
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
178 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Growth and fabrication of AlGaN/GaN HEMT
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD
✍ Weijun Luo; Xiaoliang Wang; Hongling Xiao; Cuimei Wang; Junxue Ran; Lunchun Guo; πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 262 KB

AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metalorganic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers were inserted to relieve the tension stress during the growth of GaN epilayers. The grown AlGaN/GaN H