Anomalous Gate-Edge Leakage Current in nMOSFETs Caused by Encroached Growth of Nickel Silicide and Its Suppression by Confinement of Silicidation Region Using Advanced Ion-Implantation Technique

✍ Scribed by Yamaguchi, T.; Kashihara, K.; Okudaira, T.; Tsutsumi, T.; Maekawa, K.; Murata, N.; Tsuchimoto, J.; Asai, K.; Yoneda, M.

• Book ID: 114619301
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 619 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2010588