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High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator

✍ Scribed by Seok, O.; Han, M.-K.; Ha, M.-W.; Ahn, W.

Book ID: 120344324
Publisher: The Institution of Electrical Engineers
Year: 2013
Tongue: English
Weight: 274 KB
Volume: 49
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2013.0149

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