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Normally-OFF Al 2 O 3 /AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

✍ Scribed by Freedsman, Joseph J.; Egawa, Takashi; Yamaoka, Yuya; Yano, Yoshiki; Ubukata, Akinori; Tabuchi, Toshiya; Matsumoto, Koh

Book ID: 121884214
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 815 KB
Volume: 7
Category: Article
ISSN: 1882-0778
DOI: 10.7567/APEX.7.041003

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