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5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing

✍ Scribed by Zhang, Baoshun; Tan, Shuxin; Xu, Jicheng; Dong, Zhihua; Yu, Guohao; Cai, Yong; Xue, Lu; Chen, Hongwei; Hou, Keyu; Zhao, Desheng; Wang, Yue; Liu, Shenghou; Chen, Kevin J.

Book ID: 126509744
Publisher: The Institution of Electrical Engineers
Year: 2013
Tongue: English
Weight: 260 KB
Volume: 49
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el.2012.3153

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