✦ LIBER ✦

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO 2 gate insulators

✍ Scribed by Seok, Ogyun; Ahn, Woojin; Han, Min-Koo; Ha, Min-Woo

Book ID: 120648668
Publisher: Institute of Physics
Year: 2012
Tongue: English
Weight: 812 KB
Volume: 28
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/28/2/025001

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-breakdown voltage and low on-resist

High-breakdown voltage and low on-resistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO2 gate insulator

✍ Seok, O.; Han, M.-K.; Ha, M.-W.; Ahn, W. 📂 Article 📅 2013 🏛 The Institution of Electrical Engineers 🌐 English ⚖ 274 KB

The passivation mechanism of nitrogen io

The passivation mechanism of nitrogen ions on the gate leakage current of HfO2/AlGaN/GaN MOS-HEMTs

✍ ZhiWei Bi; Yue Hao; Qian Feng; TingTing Jiang; YanRong Cao; JinCheng Zhang; Wei 📂 Article 📅 2011 🏛 Science in China Press (SCP) 🌐 English ⚖ 395 KB

Normally-OFF Al 2 O 3 /AlGaN/GaN MOS-HEM

Normally-OFF Al 2 O 3 /AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)

✍ Freedsman, Joseph J.; Egawa, Takashi; Yamaoka, Yuya; Yano, Yoshiki; Ubukata, Aki 📂 Article 📅 2014 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 815 KB