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The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs

โœ Scribed by Sanabria, C.; Chakraborty, A.; Hongtao Xu; Rodwell, M.J.; Mishra, U.K.; York, R.A.


Book ID
115526386
Publisher
IEEE
Year
2006
Tongue
English
Weight
150 KB
Volume
27
Category
Article
ISSN
0741-3106

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A simple approach including gate leakage
โœ C. H. Oxley ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 129 KB

## Abstract The article presents a simple noise equation for the first time, including a contribution from the gate leakage, which accurately predicts the experimentally observed relatively flat minimum noise figure NF~min~ for a GaN HEMT with frequency, published by Lu et al. [1] ยฉ 2002 Wiley Peri