Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

✍ Scribed by Nomoto, Kazuki; Tajima, Taku; Mishima, Tomoyoshi; Satoh, Masataka; Nakamura, Tohru

• Book ID: 125505884
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 336 KB
• Volume: 28
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2007.906930