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Reduction in leakage current in AlGaN/GaN HEMT with three Al-containing step-graded AlGaN buffer layers on silicon

✍ Scribed by Yu, Xinxin; Ni, Jinyu; Li, Zhonghui; Zhou, Jianjun; Kong, Cen

Book ID: 121877403
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 681 KB
Volume: 53
Category: Article
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.051001

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