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Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology

✍ Scribed by Chen, Wanjun; Zhang, Jing; Zhang, Bo; Li, Zhaoji


Book ID
120313757
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
609 KB
Volume
80
Category
Article
ISSN
0038-1101

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