The observation of deep donor levels in epitaxially regrown implanted silicon

✍ Scribed by S.D. Brotherton; P. Bradley; A. Gill

• Publisher: Elsevier Science
• Year: 1985
• Weight: 257 KB
• Volume: 129
• Category: Article
• ISSN: 0378-4363
• DOI: 10.1016/0378-4363(85)90562-5

✦ Synopsis

Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600°C or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by implantations of silicon, neon or nitrogen; DLTS measurements indicated that the donors were deep lying within the upper half of the silicon band gap and varied with the implant species. Annealing at 800oc removed most of the donor levels.