The observation of deep donor levels in
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S.D. Brotherton; P. Bradley; A. Gill
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Article
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1985
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Elsevier Science
โ 257 KB
Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600ยฐC or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by impl