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Note on the pressure dependence of deep donor levels in silicon

โœ Scribed by T Shimizu


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
133 KB
Volume
41
Category
Article
ISSN
0375-9601

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๐Ÿ“œ SIMILAR VOLUMES


The observation of deep donor levels in
โœ S.D. Brotherton; P. Bradley; A. Gill ๐Ÿ“‚ Article ๐Ÿ“… 1985 ๐Ÿ› Elsevier Science โš– 257 KB

Impurity profiling using C-V measurements has shown that following the epitaxial regrowth of implanted silicon at 600ยฐC or 700oc a high concentration of excess donors was located near the edge of the region which had been amorphous. These results have been obtained from layers made amorphous by impl