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Effect of Impurity Core Squeezing on Donor Energy Levels in Silicon

โœ Scribed by D. Sasireka; E. Palaniyandi; K. Iyakutti

Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
215 KB
Volume
206
Category
Article
ISSN
0370-1972

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โœ G. Murillo; N. Porras-Montenegro ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 79 KB ๐Ÿ‘ 2 views

The binding energy of a donor impurity in a spherical GaAsยฑ(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation