Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

✍ Scribed by J.J. Hamilton; E.J.H. Collart; B. Colombeau; C. Jeynes; M. Bersani; D. Giubertoni; J.A. Sharp; N.E.B. Cowern; K.J. Kirkby

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 144 KB
• Volume: 237
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2005.04.112