✦ LIBER ✦

The mechanism of simultaneous implantation and sputtering by high energy oxygen ions during secondary ion mass spectrometry (SIMS) analysis

✍ Scribed by J.C.C. Tsai; J.M. Morabito

Book ID: 118980866
Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 335 KB
Volume: 44
Category: Article
ISSN: 0039-6028
DOI: 10.1016/0039-6028(74)90105-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Analysis of polymer surfaces by SIMS. Pa

Analysis of polymer surfaces by SIMS. Part 5. The effects of primary ion mass and energy on secondary ion relative intensities

✍ D. Briggs; M.J. Hearn 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 493 KB

Modeling of the sputtering process of cu

Modeling of the sputtering process of cubic silver halide microcrystals and its relevance in depth profiling by secondary-ion mass spectrometry (SIMS)

✍ J. Lenaerts; Geert Verlinden; Velislava A. Ignatova; L. Van Vaeck; Renaat Gijbel 📂 Article 📅 2001 🏛 Springer 🌐 English ⚖ 213 KB

Surface analysis of softened paper by ti

Surface analysis of softened paper by time-of-flight secondary ion mass spectrometry (ToF-SIMS) and the Kawabata evaluation system

✍ M. Parfitt; J. C. Vickerman; R. Mitchell; C. M. Carr; N. Ince; P. Knight 📂 Article 📅 2003 🏛 Springer 🌐 English ⚖ 127 KB

Structural analysis of mono- and bis-sul

Structural analysis of mono- and bis-sulfated glycosphingolipids by negative liquid secondary ion mass spectrometry with high- and low-energy collision-induced dissociation

✍ Keiko Tadano-Aritomi; Harumi Kubo; Philip Ireland; Masaru Okuda; Masaru Okuda; T 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 599 KB

Several underivatized mono-and bis-sulfated glycosphingolipids having gangliotriaose or gangliotetraose core structure were analyzed by negative liquid secondary ion mass spectrometry (LSIMS) with high-and low-energy collision-induced dissociation (CID). In the normal negative I\_SIMS spectra, each

A SIMS and TEM analysis of the growth me

A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV

✍ C.J. Griffin; J.A. Kilner; R.J. Chater; A. Staton-Bevan; K.J. Reeson; P.L.F. Hem 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 500 KB

Energy distributions of Ga+ and In+ seco

Energy distributions of Ga+ and In+ secondary ions sputtered from AIIIBV compound semiconductors by noble gas ions: Mass-dependence of the high-energy yield on the second component (P, As, Sb) of the compounds

✍ A. Tolstogouzov; S. Daolio; C. Pagura; C.L. Greenwood; D.S. Karpuzov; N.S. McInt 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 134 KB