✦ LIBER ✦
A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV
✍ Scribed by C.J. Griffin; J.A. Kilner; R.J. Chater; A. Staton-Bevan; K.J. Reeson; P.L.F. Hemment; J.R. Davis
- Book ID
- 113280167
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 500 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0168-583X
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